IRFP450 View Datasheet(PDF) - New Jersey Semiconductor
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Description
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IRFP450 Datasheet PDF : 3 Pages
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IRFP450
THERMAL. DATA
Rthj-case
Rthj-amb
Rthc-sink
T
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
°C/W
oC/W
°C/W
°c
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting T, = 25 °C, ID = IAR, VDD = 50 V)
Max Value
14
800
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V(BR)Dss Drain-source
Breakdown Voltage
ID = 250 nA VGS = 0
loss Zero Gate Voltage
VDS = Max Rating
Drain Current (VGs = 0) VDS = Max Rating
Tc = 125 °C
loss
Gate-body Leakage
Current (Vos = 0)
VGS = ± 20 V
Min.
500
Typ. Max.
Unit
V
1
uA
50
MA
± 100 nA
ON (*)
Symbol
Vos(th)
RDS(on)
lD(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS !D = 2 5 0 u A
Static Drain-source On VGS = 10V ID = 8.4 A
Resistance
On State Drain Current VDS > lD(on) X RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
Max.
4
0.33
0.4
Unit
V
n
14
A
DYNAMIC
Symbol
Parameter
gts (*)
Forward
Transcend uctance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > lo(on) x Rosionjmax ID = 8.4 A
Min.
9.3
Typ.
13
Max.
VDS = 25 V f = 1 MHz VGS = 0
2600
330
40
Unit
S
PF
PF
PF
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