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IRFP450 View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
IRFP450 N-Channel MOSFET Transistor Iscsemi
Inchange Semiconductor Iscsemi
IRFP450 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP450
FEATURES
·Drain Current ID= 14A@ TC=25
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
500
V
±20
V
ID
Drain Current-Continuous
14
A
IDM
Drain Current-Single Pluse
56
A
PD
Total Dissipation @TC=25
180
W
TJ
Max. Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.7
/W
Rth j-a Thermal Resistance, Junction to Ambient
30
/W
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