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B1184P View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
B1184P
Iscsemi
Inchange Semiconductor Iscsemi
B1184P Datasheet PDF : 3 Pages
1 2 3
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1184
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -200mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -200mA
V(BR)CBO Collector-Base Breakdown Voltage IC= -50uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -3V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= -500mA; VCE= -5V
MIN TYP. MAX UNIT
-1.0 V
-1.5 V
-60
V
-50
V
-5
V
-1.0 μA
-1.0 μA
82
390
70
pF
50
MHz
hFE Classifications
P
Q
R
82-180 120-270 180-390
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