1.5KE110 View Datasheet(PDF) - Daesan Electronics Corp.
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Description
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1.5KE110 Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTIC at (TA=25℃ unless other specified)
J EDEC
Type
Number
1N6292(C )A
1N6293(C )
1N6293(C )A
1N6294(C )
1N6294(C )A
1N6295(C )
1N6295(C )A
1N6296(C )
1N6296(C )A
1N6297(C )
1N6297(C )A
1N6298(C )
1N6298(C )A
1N6299(C )
1N6299(C )A
1N6300(C )
1N6300(C )A
1N6301(C )
1N6301(C )A
1N6302(C )
1N6302(C )A
1N6303(C )
1N6303(C )A
General
Semiconductor
Part
Number
1.5KE 75(C)A
1.5KE 82(C)
1.5KE 82(C)A
1.5KE 91(C)
1.5KE 91(C)A
1.5KE 100(C)
1.5KE 100(C)A
1.5KE 110(C)
1.5KE 110(C)A
1.5KE 120(C)
1.5KE 120(C)A
1.5KE 130(C)
1.5KE 130(C)A
1.5KE 150(C)
1.5KE 150(C)A
1.5KE 160(C)
1.5KE 160(C)A
1.5KE 170(C)
1.5KE 170(C)A
1.5KE 180(C)
1.5KE 180(C)A
1.5KE 200(C)
1.5KE 200(C)A
1.5KE 220(C)
1.5KE 220(C)A
1.5KE 250(C)
1.5KE 250(C)A
1.5KE 300(C)
1.5KE 300(C)A
1.5KE 350(C)
1.5KE 350(C)A
1.5KE 400(C)
1.5KE 400(C)A
1.5KE 440(C)
1.5KE 440(C)A
Breakdown Voltage
V(BR) at IT (1)
(V)
Min
Max
71.3
78.8
73.8
90.2
77.9
86.1
81.9
100.0
86.5
95.5
90.0
110
95.0
105
99.0
121
105
116
108
132
114
126
117
143
124
137
136
165
143
158
144
176
152
168
153
187
162
179
162
198
171
189
180
220
190
210
198
242
209
231
225
275
237
263
270
330
285
315
315
385
333
368
360
440
380
420
396
484
418
462
Test
Current
IT
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Notes : (1) P uls e tes t: tp = 50ms
(2) S urge current waveform per F ig. 3 and derate per F ig. 2
(3) All terms and s ymbols are cons is tent with ANS I/IE E E C A62.35
(4) For bidirectional types with V R 10 volts and les s the ID limit is doubled
Stand-off
Voltage
VWM
(V)
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Maximum
R evers e
Leakage
at VWM
ID(4) (µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Pulse
Current
IPPM(2)
(A)
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
Maximum
Clamping
Voltage
at IPPM
VC (V)
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
Maximum
Temp.
Coefficient
of V(BR)
(% /¡ C)
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
A pplic ation
¥T his s eries of S ilicon Trans ient S uppres s ors is us ed in applications where large voltage trans ients can permanently damage voltage-s ens itive components.
¥T he T V S diode can be us ed in applications where induced lightning on rural or remote trans mis s ion lines pres ents a hazard to electronic circuitry
(ref: R .E .A. s pecification P.E . 60).
¥T his Trans ient Voltage S uppres s or diode has a puls e power rating of 1500 watts for one millis econd. T he res pons e time of T V S diode clamping action is
effectively ins tantaneous (1 x 10-9 s econds bidirectional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other voltage s ens itive s emi-
conductors and components. T V S diodes can als o be us ed in s eries or parallel to increas e the peak power ratings.
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