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IRFP250 View Datasheet(PDF) - IXYS CORPORATION

Part NameDescriptionManufacturer
IRFP250 Standard Power MOSFET IXYS
IXYS CORPORATION IXYS
IRFP250 Datasheet PDF : 2 Pages
1 2
IRFP 250
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 18 A, pulse test
12
S
2970
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
530
pF
180
pF
VGS = 10 V, VDS = 100 V, ID = 30 A
RG = 6.2 Ω, (External)
29 ns
130 ns
110 ns
98 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
106 140 nC
24 40 nC
43 74 nC
0.65 K/W
0.24
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
30 A
120 A
1.8 V
360
ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A
2.2 2.54
1
A
2.2 2.6
2
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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