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IRFP250 View Datasheet(PDF) - IXYS CORPORATION

Part NameDescriptionManufacturer
IRFP250 Standard Power MOSFET IXYS
IXYS CORPORATION IXYS
IRFP250 Datasheet PDF : 2 Pages
1 2
Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 250
VDSS
ID (cont)
RDS(on)
= 200 V
= 30 A
= 85 m
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
Md
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200
V
200
V
±20
V
±30
V
30
A
120
A
30
A
19
mJ
5
V/ns
TO-247 AD
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
190
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Features
l International standard package
JEDEC TO-247 AD
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l High commutating dv/dt rating
l Fast switching times
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
200
V
DS
=
V,
GS
I
D
=
250
µA
2
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
V = 10 V, I = 18 A
GS
D
Pulse test, t 300 µs, duty cycle d 2 %
V
4V
±100 nA
25 µA
250 µA
0.085
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92602E(5/96)
1-2
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