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K15N60HS View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
K15N60HS
Infineon
Infineon Technologies Infineon
K15N60HS Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SKB15N60HS
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
RthJC
RthJCD
RthJA
RthJA
Conditions
Max. Value
Unit
0.9
K/W
1.7
62
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=15A
Tj=25°C
Tj=150°C
VGE=0V, IF=15A
Tj=25°C
Tj=150°C
IC=400µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
600
-
3
-
-
-
-
Value
Typ.
-
2.8
3.5
1.5
1.5
4
-
-
-
10
Unit
max.
-V
3.15
4.00
2.0
2.0
5
µA
40
2000
100 nA
S
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
Power Semiconductors
2
Rev 2.3 Oct. 07
 

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