1SS133T View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
View to exact match
1SS133T Datasheet PDF : 2 Pages
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Diodes
Switching diode
1SS133
1SS133
!Applications
High speed switching
!Features
1) Glass sealed envelope. (MSD)
2) High speed. (trr=1.2ns Typ.)
3) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
CATHODE BAND (YELLOW)
φ0.4±0.1
29.0±1.0
2.7±0.3
ROHM : MSD
EIAJ : −
JEDEC : DO-34
29.0±1.0
φ1.8±0.2
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
90
V
DC reverse voltage
VR
80
V
Peak forward current
IFM
400
mA
Mean rectifying current
IO
130
mA
Surge current (1s)
Isurge
600
mA
Power dissipation
P
300
mW
Junction temperature
Tj
175
°C
Storage temperature
Tstg
−65~+175
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF
Reverse current
IR
Capacitance between terminals
CT
Reverse recovery time
trr
−
−
1.2
V
IF=100mA
−
−
0.5
µA VR=80V
−
−
2
pF VR=0.5V, f=1MHz
−
−
4
ns
VR=6V, IF=10mA, RL=50Ω
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