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BDW93A View Datasheet(PDF) - Power Innovations

Part Name
Description
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BDW93A
Power-Innovations
Power Innovations Power-Innovations
BDW93A Datasheet PDF : 6 Pages
1 2 3 4 5 6
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDW93
45
Collector-emitter
V(BR)CEO breakdown voltage
IC = 100 mA
IB = 0
(see Note 3)
BDW93A
60
BDW93B
80
BDW93C
100
VCB = 40 V
IB = 0
BDW93
1
ICEO
Collector-emitter
cut-off current
VCB = 60 V
VCB = 80 V
IB = 0
IB = 0
BDW93A
1
BDW93B
1
VCB = 80 V
IB = 0
BDW93C
1
VCB = 45 V
IE = 0
BDW93
0.1
VCB = 60 V
IE = 0
BDW93A
0.1
VCB = 80 V
IE = 0
BDW93B
0.1
ICBO
Collector cut-off
current
VCB = 100 V
VCB = 45 V
IE = 0
IE = 0
TC = 150°C
BDW93C
BDW93
0.1
5
VCB = 60 V
IE = 0
TC = 150°C
BDW93A
5
VCB = 80 V
IE = 0
TC = 150°C
BDW93B
5
VCB = 100 V
IE = 0
TC = 150°C
BDW93C
5
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
2
Forward current
hFE
transfer ratio
VCE(sat)
VBE(sat)
VEC
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
VCE = 3 V
VCE = 3 V
VCE = 3 V
IB = 20 mA
IB = 100 mA
IB = 20 mA
IB = 100 mA
IE = 5 A
IE = 10 A
IC = 3 A
IC = 10 A
IC = 5 A
IC = 5 A
IC = 10 A
IC = 5 A
IC = 10 A
IB = 0
IB = 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
1000
100
750
20000
2
3
2.5
4
2
4
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.56 °C/W
62.5 °C/W
PRODUCT INFORMATION
2
 

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