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KSD1589YTU View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
KSD1589YTU NPN Silicon Darlington Transistor Fairchild
Fairchild Semiconductor Fairchild
KSD1589YTU Datasheet PDF : 4 Pages
1 2 3 4
KSD1589
Low Frequency Power Amplifier
Low Speed Switching Industrial Use
• Complement to KSB1098
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
5
A
ICP
*Collector Current (Pulse)
8
A
IB
Base Current
0.5
A
PC
Collector Dissipation (Ta=25°C)
1.5
W
Collector Dissipation (TC=25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW10ms, Duty Cycle50%
Equivalent Circuit
C
B
R1
R1 8k
R2 0.12k
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
h FE1
hFE2
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tON
Turn On Time
tstg
Storage Time
tf
Fall Time
* Pulse Test: PW350µs, Duty Cycle2% Pulsed
VCB = 100V, IE = 0
VCE = 2V, IC = 3A
VCE = 2V, IC = 5A
IC = 3A, IB = 3mA
IC = 3A, IB = 3mA
VCC=50V, IC = 3A
IB1 = - IB2 = 3mA
RL = 16.7
Min.
2K
500
Typ.
6K
0.9
1.6
1
3.5
1.2
Max.
1
15K
Units
µA
1.5
V
2
V
µs
µs
µs
hFE Classification
Classification
hFE1
R
2000 ~ 5000
O
3000 ~ 7000
Y
5000 ~ 15000
©2003 Fairchild Semiconductor Corporation
Rev. B, September 2003
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