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B1443TV2Q View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
B1443TV2Q
ROHM
ROHM Semiconductor ROHM
B1443TV2Q Datasheet PDF : 3 Pages
1 2 3
Power Transistor (50V, 2A)
2SB1443
Features
1) Low saturation voltage.
VCE (sat) = 0.35V (Max.) at IC / IB = 1A / 50mA.
2) Excellent DC current gain characteristics.
Dimensions (Unit : mm)
ATV
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
50
50
6
2
5
1
150
55 to +150
1 Single pulse, Pw=10ms
2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A (DC)
A (Pulse) 1
W 2
°C
°C
(1) (2) (3)
(1) Emitter
(2) Collector
(3) Base
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SB1443
ATV
Q
TV2
2500
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
50
V
IC=−50μA
50
V
IC=−1mA
6
V
IE=−50μA
0.1
μA VCB=−50V
0.1
μA VEB=−5V
0.15 0.35
V
IC/IB=−1A/50mA
120
270
VCE/IC=−2V/0.5A
200
MHz VCE=−2V, IE=0.5A, f=100MHz
36
pF VCB=−10V, IE=0A, f=1MHz
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c 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.B
 

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