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BF199 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BF199
Philips
Philips Electronics Philips
BF199 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
NPN medium frequency transistor
Product specification
BF199
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
40
25
4
25
25
500
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VBE
base-emitter voltage
Cre
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = 40 V
IC = 0; VEB = 4 V
IC = 7 mA; VCE = 10 V
IC = 7 mA; VCE = 10 V
IC = 0; VCB = 10 V; f = 1 MHz
IC = 5 mA; VCE = 10 V; f = 100 MHz
MIN.
38
TYP.
775
550
MAX. UNIT
100 nA
100 nA
925 mV
0.5 pF
MHz
1997 Jul 07
3
 

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