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MSAHZ52F120A View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
View to exact match
MSAHZ52F120A
Microsemi
Microsemi Corporation Microsemi
MSAHZ52F120A Datasheet PDF : 0 Pages
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAGZ52F120A
MSAHZ52F120A
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAH(G)Z52F120B
high frequency IGBT, low switching losses
anti-parallel FREDiode (MSAHZ52F120A only)
1200 Volts
52 Amps
3.2 Volts vce(sat)
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ 25°C
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
90°C
Tj= 25°C
Tj=
Peak Collector Current (pulse width limited by Tjmax,)
90°C
Tj= 25°C
Tj=
Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µH,
RG= 25, Tj= 25°C
Short circuit current (SOA) , VCE1200V, TJ= 150°C, tsc10µs
Short circuit (reverse) current (RBSOA) , VCE1200V, TJ= 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHZ52F120A only)
Pulse Source Current (Body Diode, MSAHZ52F120A only)
Thermal Resistance, Junction to Case
Mechanical Outline
BVCES
BVCGR
VGES
VGEM
IC25
IC90
ICM(25)
ICM(90)
EAS
IC(sc)
IC(sc)RBSOA
PD
Tj
Tstg
IS
ISM
θJC
MAX.
1200
1200
+/-20
+/-30
52
33
104
66
65
260
66
300
-55 to +150
-55 to +150
50
100
0.4
COLLECTOR
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
mJ
A
A
Watts
°C
°C
Amps
Amps
°C/W
EMITTER (MS…A)
GATE (MS…B)
Datasheet# MSC0295A
 

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