datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

IRFP2907B View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP2907B HEXFET® Power MOSFET Die in Wafer Form IR
International Rectifier IR
IRFP2907B Datasheet PDF : 1 Pages
1
PD - 93777
HEXFET® Power MOSFET Die in Wafer Form
IRFC2907B
l 100% Tested at Probe
D
75V
l Available in Tape and Reel, Chip Pack,
RDS(on) = 2.5m
Sawn on Film and Gel Pack**
G
l Ultra Low On-Resistance
(typ.) ∗∗∗
6" Wafer
Electrical Characteristics *
S
Parameter
Description
V(BR)DSS
RDS(on)***
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
IGSS
TJ
TSTG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
Mechanical Data
Min Typ. Max
75V
–––
–––
––– 2.5m4.5m
2.0
–––
4.0V
–––
––– 20µA
–––
––– ± 200nA
-55°C to 175°C Max.
Test Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 110A
VDS = VGS, ID = 250µA
VDS = 75V, VGS = 0V, TJ = 25°C
VGS = ±20V
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Reference Packaged Part
Die Outline
Cr-NiV-Ag ( 1kA°-2kA°-5kA° )
100% Al (0.008 mm)
.257" x .360" [ 6.53 mm x 9.14 mm ]
150 mm, with 100 flat
0.254 mm ± 0.025 mm
01-5403
0.107 mm
0.51 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
IRFP2907
6.53
[.257]
SOURCE SOURCE
9.14
[.360]
0.508
[.020]
GAT E
0.508
[.020]
NOT ES :
1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ].
2. CONT ROL L ING DIMENS ION: [INCH].
3. LET T ER DES IGNAT ION:
S = S OURCE S K = S OURCE KELVIN E = EMITT ER
G = GAT E
IS = CURRENT S ENS E
4. DIMENS IONAL T OL ERANCES:
B ONDING PADS :
WIDT H
&
L ENGT H
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
OVERALL DIE:
WIDT H
&
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OL ERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
L ENGT H
> [.050] T OL ERANCE = + /- [.008]
5. UNL ES S OT HERWIS E NOT ED AL L DIE ARE GEN III
* Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in
die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance.
** Contact factory for these product forms.
***The typical RDS(on) is an estimated value for the bare die, actual results will depend on customer packaging materials and
dimensions.
www.irf.com
1
10/4/00
Direct download click here
 

Share Link : IR
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]