MJ10041 View Datasheet(PDF) - New Jersey Semiconductor
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Description
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MJ10041
New Jersey Semiconductor
MJ10041 Datasheet PDF : 3 Pages
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MJ10041, MJ10044. MJ10047
ELECTRICAL CHARACTERISTICS (Continued) ITC - 26"C unless otherwise noted.)
Characteristic
Symbol
ON CHARACTERISTICS (1)
MJ10Q41
DC Current Gain
«C - 26 Adc, VCE = 5.0 Vdc)
dC - 2 5 Adc, VCE - 10 Vdc)
Collector-Emitter Saturation Voltage
He - as Adc, IB - 2.0 Adc)
HC = 37.5 Adc, IB = 7.BAdc)
dc » 26 Adc, IB - 2.0 Adc, TC - 100°C)
"FE
VCE(sat)
Base Emitter Saturation Voltage
dc • 26 Adc. IB = 2.0 Adc)
dC - 26 Adc, IB - 2.0 Adc, TC - 100°C)
MJ10044
VBE(sat)
DC Current Gain
"F6
llC=60Adc,VCE = 5.0Vdcl
dC - 60 Adc, VCE - 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 50 Adc, IB = 1.67 Adc)
dc » 76 Adc, IB - 6.0 Adc)
dc - 60 Adc, IB = 1.67 Adc, Tc = 100°C)
vCE(sat)
Base-Emitter Saturation Voltage
dc - 50 Adc, IB = 1.67 Adc)
»C - 50 Adc, IB - 1.67 Adc, TC = 100'CI
MJ10047
VBE(sat)
DC Current Gain
dc = 100 Adc, VCE - 6.0 Vdc)
dc - 100 Adc, VCE - 1° vdc)
Collector-Emitter Saturation Voltage
dc - 100 Adc. IB - 2.76 Adc)
dC - 100 Adc, IB = 2.75 Adc, TC = 100°C)
hFE
VcElsat)
Base-Emitter Saturation Voltage
dC - 100 Adc, IB - 2.76 Adc)
(1C - 100 Adc, IB - 2.75 Adc, TC = 100'C)
(II Puha Teal: fults width of 300 in. duty cycle < 20%.
VBE(sat)
Mln
Max
25
•-
40
2.0
-
5.0
2.5
-
3.0
3.0
50
-
60
-
2.0
3.3
2.5
-
3.0
3.0
76
-
90
-
2.0
2.5
3.6
I
3.S
ELECTRICAL CHARACTERISTICS (Continued) (TC - 25'C unless otherwise noted.)
Characteristic
SWITCHING CHARACTERISTICS
Symbol
Mln
TYP
Max
MJ10M1
Resistive Load
Delay Time
td
—
0.03
0.25
Rise Time
Storage Time
ivcc - soo vdc, IG - 25 A, iB, - 2.5 A,
VBEIOFFI = 6.0 v, tp = so ps,
Duty Cycle a 2.0%)
lr
ts
—
—
1.2
5.0
3.3
10
Fall Time
tf
—
1.6
5.0
Inductive Load, Clamped
Storage Time
Crossover Time
Storage Time
Crossover Time
(ICM = 25A,
VCEM = MO v.
VflEIOFF) = 5.0 V.
IB1 -2.SA)
Tj - 100"C
<sv
—
S.O
16
tc
—
3.0
10
Tj - 25'C
'sv
—
33
10
tc
-
1.5
E.O
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vde
Unit
ia
if
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