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MJ10047 View Datasheet(PDF) - New Jersey Semiconductor

Part NameDescriptionManufacturer
MJ10047 25, 50, and 100 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 250, 450 and 850 VOLTS 250 WATTS NJSEMI
New Jersey Semiconductor NJSEMI
MJ10047 Datasheet PDF : 3 Pages
1 2 3
MJ1Q04t; MJ10044, MJ10047
MAXIMUM RATINGS (Continued) ITC - 26'C unless otherwise noted.)
Rating
Symbol
Collector-Emitter Voltage (IB - 0)
Collector-Emitter Voltage (RBE • 1* Ohms)
Collector-Base Voltage
Emitter-Bale Voltage
VCEO
VCEH
VCB
VEB
Collector Current — Operating
fTc - 115°C)
(Tc = 85'C)
(Tc = 8S'C)
'c(op)
Collector Current — Continuous
fe
— Peak Repetitive
— Peak Nonrepetitlve
Base Current — Continuous
IB
— Peak Nonrepetitive
Total Device Dissipation
PD
Derate above TC = 26'C
For 1-mlnute overload
Operating Junction and Storage Temperature Range
For 1-mlnute overload
Tj, Tstg
MJ10041
850
900
900
25
37.6
76
126
MJ10044
460
600
600
8.0
60
75
ISO
250
26
SO
250
2.0
333
-55 to +150
-65 to 200
MJ10047
250
300
300
100"
100
300
600
Unit
Vdc
Vdo
Vdc
Vdc
A
A
A
Watts
vwc
Watts
•c
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Mln
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
«C = 126 mAdc)
MJ 10041
MJ 10044
MJ 10047
VCEO(sua)
850
450
250
Vdc
-
Collector Cutoff Current
(VCE - mud VCB. VBE(off) - 1.5 Vdc)
(VcE - Rated VCB. VflEloffl = t-B Vdc, TC - 160'C|
ICEV
-
2.0
mA
10
Collector Cutoff Current
{VCE - Rated VCER, RBE= 10 n. TC = loo-C)
ICER
10
mA
Emitter Cutoff Current
(VEB - 4.0 Vdc. IC - 0)
MJ10041
MJ10D44
MJ10047
IEBO
mA
500
-
2.6
SAFE OPERATING AREA
Second Breekdown Collector Current with Base Forward-Biased
Clamped Inductive SOA with Base Reverse-Biased
Overload Safe Operating Area
FBSOA
RBSOA
OLSOA
See Figures 32, 34 & 36
See Figures 33, 35 & 37
See Figures 38, 39, 40, 41, 42 Si 43
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = o, f|est - 1.0 kHz)
C0b
2000
PF
(1) Pulse Tetl, Pulie width of 300 ^, duty cycle < 2.0%,
•This rating is wtlh a 60% duty cycle, and Is limited by power dissipation. Higher operating currents am «IFowibl« it lowtr duty cyclai.
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