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IRFD120 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFD120
Vishay
Vishay Semiconductors Vishay
IRFD120 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFD120, SiHFD120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 0.78 Ab
VDS = 50 V, ID = 0.78 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 9.2 A, VDS = 80 V
see fig. 6 and 13b
VDD = 50 V, ID = 9.2 A
RG = 18 Ω, RD = 5.2 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
MIN. TYP. MAX. UNIT
100
-
-
V
-
0.13
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.27
Ω
0.80
-
-
S
-
360
-
-
150
-
pF
-
34
-
-
-
16
-
-
4.4
nC
-
-
7.7
-
6.8
-
-
27
-
ns
-
18
-
-
17
-
-
4.0
-
nH
-
6.0
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
1.3
A
-
-
10
Body Diode Voltage
VSD
TJ = 25 °C, IS = 1.3 A, VGS = 0 Vb
-
-
2.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
130
260
ns
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µsb
Qrr
-
0.65 1.3
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91128
S-81393-Rev. A, 07-Jul-08
 

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