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MC33880DW View Datasheet(PDF) - Freescale Semiconductor

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MC33880DW Datasheet PDF : 25 Pages
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ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.75 V VDD 5.25 V, 9.0 V VPWR 16 V, -40°C TC 125°C unless otherwise
noted. Typical values, where applicable, reflect the parameter’s approximate average value with VPWR = 13 V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING
Output Slew Rate Low-Side Configuration (14)
RL = 620 Ω
tR
V/μs
0.1
0.5
1.2
Output Slew Rate Low-Side Configuration (14)
RL = 620 Ω
tF
V/μs
0.1
0.5
1.2
Output Slew Rate High-Side Configuration (14)
RL = 620 Ω
tR
V/μs
0.1
0.3
1.2
Output Slew Rate High-Side Configuration (14)
RL = 620 Ω
tF
V/μs
0.1
0.3
1.2
Output Turn ON Delay Time, High-Side and Low-Side Configuration (15)
tDLY(ON)
1.0
15
50
μs
Output Turn OFF Delay Time, High-Side and Low-Side Configuration (15)
tDLY(OFF)
1.0
30
100
μs
Output Fault Delay Time (16)
tFAULT
100
300
μs
DIGITAL INTERFACE TIMING
Recommended Frequency of SPI Operation
4.0
6.0
MHz
Required Low State Duration on VDD for Reset (17)
VDD 0.2 V
tRESET
μs
4.0
10
Falling Edge of CS to Rising Edge of SCLK (Required Setup Time)
tLEAD
100
ns
Falling Edge of SCLK to Rising Edge of CS (Required Setup Time)
tLAG
50
ns
DI to Falling Edge of SCLK (Required Setup Time)
tDI(su)
16
ns
Falling Edge of SCLK to DI (Required Hold Time)
DI, CS, SCLK Signal Rise Time (18)
DI, CS, SCLK Signal Fall Time (18)
Time from Falling Edge of CS to DO Low Impedance (19)
Time from Rising Edge of CS to DO High Impedance (20)
Time from Rising Edge of SCLK to DO Data Valid (21)
tDI(HOLD)
20
ns
tR(DI)
5.0
ns
tF(DI)
5.0
ns
tDO(EN)
60
ns
tDO(DIS)
60
ns
tVALID
25
60
ns
Notes
14. Output Rise and Fall time respectively measured across a 620 Ω resistive load at 10 to 90 percent and 90 to 10 percent voltage points.
15. Output turn ON and OFF delay time measured from 50 percent rising edge of CS to 90 and 10 percent of initial voltage.
16. Duration of fault before fault bit is set. Duration between access times must be greater than 300 μs to read faults.
17. This parameter is guaranteed by design but is not production tested.
18. Rise and Fall time of incoming DI, CS, and SCLK signals suggested for design consideration to prevent the occurrence of double pulsing.
19. Time required for output status data to be available for use at DO pin.
20. Time required for output status data to be terminated at DO pin
21. Time required to obtain valid data out from DO following the rise of SCLK.
33880
8
Analog Integrated Circuit Device Data
Freescale Semiconductor
 

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