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IRF250 View Datasheet(PDF) - New Jersey Semiconductor

Part NameDescriptionManufacturer
IRF250 N-CHANNEL POWER MOSFETS NJSEMI
New Jersey Semiconductor NJSEMI
IRF250 Datasheet PDF : 3 Pages
1 2 3
IRF450/451/452/453
N-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Symbol Typ* Mln TYP Max Units
Test Conditions
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)
Is
IRF450
IRF461
-
-
13
IRF452
1RF453
-
12
ISM
IRF450
IRF451
-
-
52
IRF452
IRF4.53
-
-
48
A
A Modified MOSFET symbol
showing the Integral
A reverse P-N junction rectifier
A
sI
Diode Forward Voltage (2)
Vso
IRF460
IRF451
-
-
1.4
V TC=25°C, ls=13A. VQS-OV
IRF452
IRF453
-
.-
1.3
V Tc-25°C. ls-12A, Vos=OV
Reverse Recovery Time
tr ALL • - 1300 __ ns Tj=150i'C. IF-13A, dlp/dt= 100 A/us
Notas: (1) Tj=26°C to 150'C (2) Pulse test: Pulse wldth«300us, Duty Cycle<:2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
^"'j r
<KV> Puta T«I
t6V
VM- 8V
10
Vrti- 4 6 V
Vnl-
0
60
100
150 200
250 30<
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Typical Output Characteristics
Vut. OATE-TO^OURCE VOLTAOE (VOLTS)
Typical Transfer Characteristics
i
2
3
VD9, DRAIN-TO-SOuncE VOLTAGE (VOLTS)
Typical Saturation Characteristics
"l02
6 10 20 10 100 200 600
Vos. ODAIN-TO-SOURCE VOLTAOE (VOLTS)
Maximum Sato Optratlng Am
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