IRF251 View Datasheet(PDF) - New Jersey Semiconductor
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IRF251 Datasheet PDF : 3 Pages
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IRF450/451/452/453
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise.speomea,
Characteristic
Symbol Type Mln Typ Max Units
Test Conditions
Drain-Source Breakdown
Voltage
IRF450
IRF452 500
-
-
V Vas-OV
BVoss
IRF461
IRF453 460
-
-
V ID=250(/A
Gate Threshold Voltage
Vos(lh| ALL 2.0 _ 4.0 V VDS=VQS, IID-250HA
Gate-Source Leakage Forward loss
Gate-Source Leakage Reverse loss
ALL - - 100 nA Vos=20V
ALL _ - -100 nA Vos--20V
Zero Gate Voltage
Drain Current
— — 250 fA VDs=Max. Rating, Vos-OV
loss
ALL
— — 1000 HA Vos=Max. RatingXO.8. Vss-OV. Tc-126-C
On-State Drain-Source
Current (2)
IRF450
IRF451 13
-
-
A
lu<on)
VDS>lD(on)XRDS|on)m«., Vos=10V
IRF4S2
IRF453 12
-
-
A
IRF450
Static Drain-Source On-State
IRF451 - 0.38 0.4
RoSfonl
Resistance (Z)
IRF4S2
IRF453 - 0.4 0.5
0
Vos=10V, ID=7.0A
Q
Forward Transconductance (2) gis
Input Capacitance
Ci»
ALL
ALL
6.0 10.8 - 0 VDS>lo(on)XRoS(on»nM..
- 2850 3000 PF
to=7.0A
Output Capacitance
COM ALL — 3SO 600 PF Vos=OV, VDs=25V, f= 1.0MHz
Reverse Transfer Capacitance Cnu ALL — 160 •200 PF
Turn-On Delay Time
td(on)
Rise Time
t,
Turn-Off Delay Time
td«jit)
Fall Time
tl
Total Gate Charge .
Gate-Source Plus Gate-Drain) QQ
Gate-Source Charge
Qa*
Gate-Drain ("Miller") Charge 0*
ALL
ALL
ALL
ALL
ALL
•ALL
ALL
- — 35
:— 50
- - 150
- 70
--—
77
11
66
120
—
-
ns
ns VoD-O.SBVoss. lo=7.0A, Z0=4.7Q
(MOSFET switching times are essentially
ns Independent of operating temperature.)
ns
nC VGS=10V, ID=16A, Vos-0.8 Max. Rating
(Gate charge is essentially Independent of
nC operating temperature. See Fig. 8 page 21
nC
THERMAL RESISTANCE
Junction-to-Case
Case-to-SInk
Junc(ion-to- Ambient
Riwc ALL — — 0.83 K/W
Rtnos ALL — 0.1 — Km Mounting surface flat, smooth, and greased
R«DA ALL - - 30 K/W Free Air Operation
Notes: (1) Tj-25°C to 150°C
(2) Pulse test: Pulse width<300ps, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
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