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CPV362M4UPBF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
CPV362M4UPBF IGBT SIP Module (Fast IGBT) Vishay
Vishay Semiconductors Vishay
CPV362M4UPBF Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
CPV362M4UPbF
Vishay High Power Products
IGBT SIP Module
(Fast IGBT)
80 %
of VCE
Same type
device as
D.U.T.
430 µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
10% +Vg
GATE VOLTAGE D.U.T.
+Vg
Vce
10% Ic
Vcc
90% Ic
DUT VOLTAGE
AND CURRENT
Ipk
Ic
td(on)
5% Vce
tr
t1
t2
Eon = VVcceeieIedt dt
t1
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
+Vge
Ic 10% Vce
td(off)
90% Vge
Vce
90% Ic
Ic
5% Ic
tf
t1+5μS
Eoff = VVce iIccddt t
t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a,
Defining Eoff, td(off), tf
trr
Ic
tx
10% Vcc
Vpk
Irr
trr
Qrr = Iiddddtt
tx
10% Irr
Vcc
DIODE RECOVERY
WAVEFORMS
DIODE REVERSE
RECOVERY ENERGY
t3
t4
Erec = Vd Id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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8
For technical questions, contact: ind-modules@vishay.com
Document Number: 94483
Revision: 01-Sep-08
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