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CPV362M4UPBF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
CPV362M4UPBF IGBT SIP Module (Fast IGBT) Vishay
Vishay Semiconductors Vishay
CPV362M4UPBF Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
IGBT SIP Module
(Fast IGBT)
CPV362M4UPbF
Vishay High Power Products
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
0.01
0.00001
0.0001
0.001
0.01
2. Peak TJ = PDM x Z thJC + TC
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
1000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
800
Coes = C ce + C gc
Cies
0.20 VCC = 480V
VGE = 15V
TJ = 25 ° C
0.19 IC = 3.9A
600
0.18
Coes
400
0.17
Cres
200
0.16
0
A
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
20
VCC = 400V
I C = 3.9A
16
0.15
0
10
20
30
40
50
RG , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
1 RG = 50 Ω
VGE = 15V
VCC = 480V
IC = 7.8 A
12
IC = 3.9 A
8
IC =1.95 A
4
0
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate to Emitter Voltage
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Document Number: 94483
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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