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CPV362M4UPBF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
CPV362M4UPBF IGBT SIP Module (Fast IGBT) Vishay
Vishay Semiconductors Vishay
CPV362M4UPBF Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
CPV362M4UPbF
Vishay High Power Products
IGBT SIP Module
(Fast IGBT)
8
7
6
5
4
3
2
1
0
0.1
100
2.34
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
2.05
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage 1.76
1.46
1.17
0.88
0.59
1
10
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
0.29
0.00
100
8
10
TJ = 150°C
TJ = 25°C
1
0.1
0.1
VGE = 15V
20μs PULSE WIDTH A
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
100
10
TJ = 150°C
TJ = 25°C
1
0.1
4
VCC = 10V
5μs PULSE WIDTH A
6
8
10
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
6
5
3
2
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
3.0
VGE = 15V
80 us PULSE WIDTH
IC= 7.8A
2.0
IC= 3.9A
IC=1.95A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94483
Revision: 01-Sep-08
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