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CPV362M4UPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
CPV362M4UPBF
Vishay
Vishay Semiconductors Vishay
CPV362M4UPBF Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
IGBT SIP Module
(Fast IGBT)
CPV362M4UPbF
Vishay High Power Products
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Og
OGE
Ogc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
IC = 3.9 A
VCC = 400 V
VGE = 15 V
TJ = 25 °C
IC = 3.9 A, VCC = 480 V
VGE = 15 V, RG = 50 Ω
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
TJ = 150 °C
IC = 3.9 A, VCC = 480 V
VGE = 15 V, RG = 50 Ω
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
VGE = 0 V
VCC = 30 V
ƒ = 1.0 MHz
See fig. 7
Diode reverse recovery time
TJ = 25 °C
trr
See fig. 14
TJ = 125 °C
Diode peak reverse recovery current
Irr
Diode reverse recovery charge
Qrr
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
See fig. 15
See fig. 16
IF = 8.0 A
VR = 200 V
dI/dt = 200 A/µs
Diode peak rate of fall of
recovery during tb
dI(rec)M/dt
TJ = 25 °C
TJ = 125 °C
See fig. 17
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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TYP.
31
5.0
13
45
22
100
120
0.13
0.07
0.20
42
22
120
250
0.35
530
39
7.4
37
55
3.5
4.5
65
124
240
210
MAX.
47
7.5
20
-
-
160
180
-
-
0.3
-
-
-
-
-
-
-
-
55
90
5.0
8.0
138
360
-
-
UNITS
nC
ns
mJ
ns
mJ
pF
ns
A
nC
A/µs
Document Number: 94483
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
 

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