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CPV362M4UPBF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
CPV362M4UPBF IGBT SIP Module (Fast IGBT) Vishay
Vishay Semiconductors Vishay
CPV362M4UPBF Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
CPV362M4UPbF
Vishay High Power Products
IGBT SIP Module
(Fast IGBT)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE on conduction
Case to sink, flat, greased surface
RthJC (IGBT)
RthJC (DIODE)
RthCS (MODULE)
Weight of module
TYP.
-
-
0.1
20
0.7
MAX.
5.5
9.0
-
UNITS
°C/W
g
oz.
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Temperature coefficient of
breakdown voltage
V(VB)CES (1)
ΔV(BR)CES/ΔTJ
VGE = 0 V, IC = 250 µA
VGE = 0 V, IC = 1 mA
Collector to emitter saturation voltage
VCE(on)
IC = 3.9 A
IC = 7.2 A
IC = 3.9 A, TJ = 150 °C
VGE = 15 V
See fig. 2, 5
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
ΔVGE(th)/ΔTJ
VCE = VGE, IC = 250 µA
Forward transconductance
gfe (2)
VCE = 100 V, IC = 6.5 A
Zero gate voltage collector current
VGE = 0 V, VCE = 600 V
ICES
VGE = 0 V, VCE = 600 V, TJ = 150 °C
Diode forward voltage drop
IC = 8.0 A
VFM
See fig. 13
IC = 8.0 A, TJ = 150 °C
Gate to emittler leakage current
IGES
VGE = ± 20 V
Notes
(1) Pulse width 80 µs; duty factor 0.1 %
(2) Pulse width 5.0 µs, single shot
MIN.
600
-
-
-
-
3.0
-
1.4
-
-
-
-
-
TYP.
-
0.63
1.70
1.95
1.70
-
- 11
4.3
-
-
1.4
1.3
-
MAX.
-
UNITS
V
-
V/°C
2.2
-
V
-
6.0
-
mV/°C
-
S
250
µA
2500
1.7
V
1.6
± 100
nA
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94483
Revision: 01-Sep-08
Direct download click here

 

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