datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FT1016BH View Datasheet(PDF) - Formosa Technology

Part Name
Description
View to exact match
FT1016BH
FAGOR
Formosa Technology FAGOR
FT1016BH Datasheet PDF : 4 Pages
1 2 3 4
FT10...H
HIGH COMMUTATION TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
Quadrant
SENSITIVITY Unit
IGT (1)
Gate Trigger Current
IDRM /IRRM Off-State Leakage Current
Vto (2)
Rd(2)
VTM (2)
VGT
VGD
IH (2)
IL
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Current
Holding Current
Latching Current
dv / dt (2) Critical Rate of Voltage Rise
(dI/dt)c (2) Critical Rate of Current Rise
Rth(j-c)
Rth(j-a)
Thermal Resistance
Junction-Case
Thermal Resistance
Junction-Ambient
VD = 12 VDC , RL = 33, Tj = 25 ºC
VD = VDRM ,
Tj = 125 ºC
VR = VRRM ,
Tj = 25 ºC
Tj = 125 ºC
Tj = 125 ºC
IT = 14 Amp, tp = 380 µs, Tj = 25 ºC
VD = 12 VDC , RL = 33, Tj = 25 ºC
VD = VDRM , RL = 3.3K, Tj = 125 ºC
IT = 500 mA , Gate open, Tj = 25 ºC
IG = 1.2 IGT, Tj = 25 ºC
VD = 0.67 x VDRM , Gate open
Tj = 125 ºC
(dv/dt)c= 0.1 V/µs
(dv/dt)c= 10 V/µs
without snubber
Tj = 125 ºC
Tj = 125 ºC
Tj = 125 ºC
for AC 360º conduction angle
Q1÷Q3
Q1÷Q3
Q1÷Q3
Q1,Q3
Q2
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
MIN
MIN
MIN
11 14
25 35
1
5
0.85
40
1.55
1.3
0.2
25 35
40 50
50 60
200 500
--
--
5 5.5
1.5
60
16
50 mA
mA
µA
V
m
V
V
V
50 mA
70 mA
80
1000 V/µs
- A/ms
-
9
ºC/W
ºC/W
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
F T 10
11 B H 00 TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Jun - 02
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]