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GL34B View Datasheet(PDF) - Diode Semiconductor Korea

Part Name
Description
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GL34B
DSK
Diode Semiconductor Korea DSK
GL34B Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea
GL34A- - -GL34M
FIG.1 -- FORWARD DERATING CURVE
1.2
Resistive or
inductive Load
1.0
0.8
0.6
0.4
0.2X0.2(5.0X5.0mm)
THICK COPPERPAND
AREAS
0.2
0
0
20 40 60
80 100 120 140 160
AMBIENT TEMPERATURE
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
100
10
TJ=25OC
1
0.1
Puise Width=300 S
1%DUTY CYCLE
0.01
0.4 0.6 0.8 1.0. 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
60
f=1MHz
40
TJ=25
20
10
4
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.2 PEAK FORWARD SURGE CURRENT
100
40
30
TL =1 10 OC
8.3ms Single Half Sine W ave
(JEDEC Method)
S1(A-J)
10
S1(K,M)
11
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
10
1
0.1
0.01
0.001
0
TJ=125OC
TJ=75 OC
TJ=25OC
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.6-TRANSIENT THERMAL IMPEDANCE
100
10
S1(K,M)
1
0.1
0.01
S1(A-J)
UNITS MOUNTED on
0.20x0.20''(5.0X5.0mm)X0.5mil
INCHES(0.013mm)
THICK COPPERLAND AREAS
0.1
1
10
100
PULSE DURATON,SEC
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