3 整流ダイオード/Rectifier Diodes
■ 低 IR ショットキーバリアダイオード Low IR Schottky-Barrier Diodes
シングル 1 in one-package
型式
Device type
SMD 絶対最大定格
対応品 Maximum rating
VRRM IO *1
Volts Amps.
YG861S12R
120 5 (Tc=104℃)
YG861S15R
150 5 (Tc=94℃)
( ) 条件
*1 50Hz方形波 duty=1/2
*2 正弦波 10ms.
*3 IF=Io
*4 VR=VRRM
IFSM*2
Amps.
接合、保存温度 電気的特性(Ta=25℃)
Thermal rating Characteristics
Tj and Tstg VFM*3
IRRM*4
℃
Max. Volts
Max.μA
75 -40 to +150 0.88
150
75 -40 to +150 0.9
150
( ) Conditions
*1 50Hz Square wave duty=1/2
*2 Sine wave,
*3 IF=Io
*4 VR=VRRM
Rth (j-c)
℃/W
5.0
5.0
パッケージ
Package
TO-220F
TO-220F
質 量
Net
mass
Grams
2.0
2.0
デュアル 2 in one-package
型式
Device type
YG862C04R
YA862C04R
TS862C04R
YG865C04R
YA865C04R
TS865C04R
YG868C04R
YA868C04R
TS868C04R
YG869C04R
YA869C04R
YG862C06R
YA862C06R
SMD 絶対最大定格
対応品 Maximum rating
VRRM IO *1
Volts Amps.
45 10(Tc=129℃)
45 10(Tc=138℃)
SMD 45 10(Tc=138℃)
45 20(Tc=115℃)
45 20(Tc=126℃)
SMD 45 20(Tc=126℃)
45 30(Tc=105℃)
45 30(Tc=122℃)
SMD 45 30(Tc=122℃)
45 40(Tc=112℃)
45 40(Tc=120℃)
60 10(Tc=124℃)
60 10(Tc=136℃)
TS862C06R
SMD 60 10(Tc=136℃)
YG865C06R
60 20(Tc=109℃)
YA865C06R
60 20(Tc=122℃)
TS865C06R
SMD 60 20(Tc=122℃)
YG868C06R
60 30(Tc=101℃)
YA868C06R
60 30(Tc=119℃)
TS868C06R
SMD 60 30(Tc=119℃)
YG869C06R
60 40(Tc=105℃)
YA869C06R
60 40(Tc=114℃)
YG862C08R
80 10(Tc=109℃)
YA862C08R
80 10(Tc=126℃)
TS862C08R
SMD 80 10(Tc=126℃)
YG865C08R
80 20(Tc=89℃)
YA865C08R
80 20(Tc=107℃)
TS865C08R
SMD 80 20(Tc=107℃)
YG868C08R
80 30(Tc=72℃)
YA868C08R
80 30(Tc=105℃)
TS868C08R
SMD 80 30(Tc=105℃)
YG869C08R
80 40(Tc=86℃)
YA869C08R
80 40(Tc=98℃)
( ) 条件
*1 50Hz方形波 duty=1/2 (センタータップ平均出力電流)
*2 正弦波 10ms. 1チップあたり *3 IF=0.5Io 1チップあたり
*4 VR=VRRM 1チップあたり
IFSM*2
Amps.
125
接合、保存温度 電気的特性(Ta=25℃)
Thermal rating Characteristics
Tj and Tstg VFM*3
IRRM*4
℃
Max. Volts
Max.μA
-40 to +150 0.61
0.15
Rth (j-c)
℃/W
3.5
パッケージ
Package
TO220F
質 量
Net
mass
Grams
2.0
125 -40 to +150 0.61
0.15
2.0 TO220AB
2.0
125 -40 to +150 0.61
0.15
2.0 T-pack(S)
1.6
145 -40 to +150 0.63
0.175 2.5 TO220F
2.0
145 -40 to +150 0.63
0.175 1.75 TO220AB
2.0
145 -40 to +150 0.63
0.175 1.75 T-pack(S)
1.6
160 -40 to +150 0.63
0.20
2.0 TO220F
2.0
160 -40 to +150 0.63
0.20
1.25 TO220AB
2.0
160 -40 to +150 0.63
0.20
1.25 T-pack(S)
1.6
190 -40 to +150 0.61
0.20
1.2 TO220F
2.0
190 -40 to +150 0.61
0.20
1.0 TO220AB
2.0
125 -40 to +150 0.68
0.15
3.5 TO220F
2.0
125 -40 to +150 0.68
0.15
2.0 TO220AB
2.0
125 -40 to +150 0.68
0.15
2.0 T-pack(S)
1.6
145 -40 to +150 0.74
0.175 2.5 TO220F
2.0
145 -40 to +150 0.74
0.175 1.75 TO220AB
2.0
145 -40 to +150 0.74
0.175 1.75 T-pack(S)
1.6
160 -40 to +150 0.74
0.20
2.0 TO220F
2.0
160 -40 to +150 0.74
0.20
1.25 TO220AB
2.0
160 -40 to +150 0.74
0.20
1.25 T-pack(S)
1.6
190 -40 to +150 0.70
0.20
1.2 TO220F
2.0
190 -40 to +150 0.70
0.20
1.0 TO220AB
2.0
125 -40 to +150 0.76
0.15
3.5 TO-220F
2.0
125 -40 to +150 0.76
0.15
2.0 TO-220AB
2.0
125 -40 to +150 0.76
0.15
2.0 T-pack(S)
1.6
145 -40 to +150 0.76
0.175 2.5 TO-220F
2.0
145 -40 to +150 0.76
0.175 1.75 TO-220AB
2.0
145 -40 to +150 0.76
0.175 1.75 T-pack(S)
1.6
160 -40 to +150 0.76
0.20
2.0 TO-220F
2.0
160 -40 to +150 0.76
0.20
1.25 TO-220AB
2.0
160 -40 to +150 0.76
0.20
1.25 T-pack(S)
1.6
190 -40 to +150 0.71
0.20
1.2 TO220F
2.0
190 -40 to +150 0.71
0.20
1.0 TO220AB
2.0
( ) Conditions
*1 50Hz Square wave duty=1/2 (Average forward current of centertap full wave connection)
*2 Sine wave, 10ms per element
*3 IF=0.5Io per element
*4 VR=VRRM per element
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