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TS68C429AVRA View Datasheet(PDF) - Unspecified

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TS68C429AVRA Datasheet PDF : 46 Pages
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TS68C429A
5.3 Electrical Characteristics
Table 5-1. Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Max
Unit
VCC
Supply Voltage
-0.3
+7.0
V
VI
Input Voltage
-0.3
+7.0
V
PDMAX
Max Power Dissipation
400
mW
M suffix
-55
+125
°C
TCASE
Operating Temperature
V suffix
-40
+85
°C
TSTG
Storage Temperature
-55
+150
°C
TJ
Junction Temperature
+160
°C
TLEADS
Lead Temperature
Max 5 sec.
soldering
+270
°C
Unless otherwise stated, all voltages are referenced to the reference terminal.
Table 5-2. Recommended Condition of Use
Symbol
Parameter
Test conditions
Min
VCC
VIL
VIH
TCASE
Supply Voltage
Low Level Input Voltage
High Level Input Voltage
Operating Temperature
M suffix
V suffix
4.5
-0.5
2.25
-55
-40
CL
Output Loading Capacitance
tr(c)
Clock Rise Time (See Figure
5-1 on page 9)
tf(c)
Clock Fall Time (See Figure
5-1 on page 9)
fc
Clock System Frequency
(See Figure 5-1 on page 9)
0.5
Max
5.5
0.8
5.8
+125
+85
130
5
5
20
Units
V
V
V
°C
°C
pF
ns
ns
MHz
This device contains protective circuitry against damage due to high static voltages or electrical fields:
however, it is advised that normal precautions be taken to avoid application of any voltages higher than
maximum-rated voltages to this high-impedance circuit. Reliability of operation is enhanced if unused
inputs are tied to an appropriate logic voltage level (e.g., either GND or VCC).
8
0848E–HIREL–02/08
e2v semiconductors SAS 2008
 

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