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IRFP240 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFP240 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
IRFP240 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFP240
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFP240
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
200
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
20
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
80
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
150
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
510
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
200
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0
Zero-Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
On-State Drain Current (Note 2)
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 11V (Figure 7) 20
Gate to Source Leakage
IGSS VGS = ±20V
-
Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 10A (Figures 8, 9)
-
Forward Transconductance (Note 2)
g fs
VDS 10V, ID = 11A
6.7
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(ON) VDD = 100V, ID 18A, RGS = 9.1, VGS = 10V,
-
tr
RL = 5.4
MOSFET Switching Times are Essentially
-
td(OFF) Independent of Operating Temperature
-
Fall Time
tf
-
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Qg(TOT) VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS,
-
IG(REF) = 1.5mA (Figure 14)
Qgs
Gate Charge is Essentially Independent of
Operating Temperature
-
Qgd
-
Input Capacitance
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
Output Capacitance
COSS
-
Reverse Transfer Capacitance
C RSS
-
Internal Drain Inductance
LD
Measured between the Modified MOSFET
-
Contact Screw on
Symbol Showing the
Header that is Closer to Internal Devices
Source and Gate Pins Inductances
and Center of Die
D
Internal Source Inductance
LS
Measured from the
Source Lead, 6mm
LD
-
(0.25in) from Header to
G
Source Bonding Pad
LS
TYP
-
-
-
-
-
-
0.14
11
14
51
45
36
43
10
32
1275
500
160
5.0
12.5
MAX
-
4.0
25
250
-
±100
0.18
-
21
77
68
54
60
-
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
Junction to Case
Junction to Ambient
RθJC
R θ JA
Free Air Operation
S
-
-
0.83
oC/W
-
-
30
oC/W
©2002 Fairchild Semiconductor Corporation
IRFP240 Rev. B
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