IRFP240 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
IRFP240 Datasheet PDF : 7 Pages
| |||
Data Sheet
January 2002
IRFP240
20A, 200V, 0.180 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP240
TO-247
IRFP240
NOTE: When ordering, include the entire part number.
Features
• 20A, 200V
• rDS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRFP240 Rev. B
|
|
Share Link: 