AP28G45GEO-HF View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
View to exact match
AP28G45GEO-HF Datasheet PDF : 4 Pages
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Advanced Power
Electronics Corp.
AP28G45GEO-HF
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
▼ High Peak Current Capability
▼ Low Gate Drive
▼ Strobe Flash Applications
E
E
E
G
TSSOP-8
C
C
C
C
VCE
ICP
G
400V
150A
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
VGE
ICP
PD@TA=25℃1
TSTG
TJ
Collector-Emitter Voltage
Peak Gate-Emitter Voltage
Pulsed Collector Current, VGE @ 2.5V
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
±6
150
1
-55 to 150
150
Units
V
V
A
W
℃
℃
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
-
- ±10
ICES
Collector-Emitter Leakage Current VCE=400V, VGE=0V
-
-
10
VCE(sat)
Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed)
- 5.2 9
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
0.3 - 1.2
Qg
Total Gate Charge
IC=40A
-
76 130
Qge
Gate-Emitter Charge
VCE=200V
-
4
-
Qgc
Gate-Collector Charge
VGE=4V
-
26
-
td(on)
Turn-on Delay Time
VCC=320V
- 220 -
tr
Rise Time
td(off)
Turn-off Delay Time
IC=160A
RG=10Ω
- 800 -
- 1.6 -
tf
Fall Time
VGE=4V
- 1.5 -
Cies
Input Capacitance
VGE=0V
- 4485 8240
Coes
Output Capacitance
VCE=30V
-
44
-
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
-
40
-
-
- 125
Units
uA
uA
V
V
nC
nC
nC
ns
ns
µs
µs
pF
pF
pF
℃/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board.
Data and specifications subject to change without notice
1
201208037
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