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ACE1551BJM-H View Datasheet(PDF) - ACE Technology Co., LTD.

Part Name
Description
View to exact match
ACE1551BJM-H
ACE
ACE Technology Co., LTD. ACE
ACE1551BJM-H Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
ACE1551B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE1551B combines advanced trench MOSFET technology with a low resistance package to
provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,
Pagers.
Features
VDS =20V
ID=0.7A
RDS(ON)<360mΩ (VGS=4.5V)
RDS(ON)<420mΩ (VGS=2.5V)
RDS(ON)<560mΩ (VGS=1.8V)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20 V
Gate-Source Voltage
Continuous Drain Current * AC
TA=25
TA=70
VGSS
ID
±12 V
700
mA
560
Pulsed Drain Current * B
IDM
1A
Power Dissipation
TA=25
TA=70
0.27
PD
W
0.16
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC
Packaging Type
SOT-723
VER 1.2 1
 

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