2SC2625B View Datasheet(PDF) - Nell Semiconductor Co., Ltd
Part Name
Description
View to exact match
2SC2625B
Nell Semiconductor Co., Ltd
2SC2625B Datasheet PDF : 3 Pages
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SEMICONDUCTOR
2SC2625B RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
CONDITIONS
MIN
ICBO
Collector cutoff current
VCBO = 450V, lE = 0
IEBO
Emitter cutoff current
VEBO = 7V, lC = 0
VCEO
VCEO(SUS)*
Collector to emitter voltage
lCEO = 10mA
400
lC = 1A, L = 50mH
VCBO
Collector to base voltage
lCBO = 1mA
450
VEBO
Emitter to base voltage
lEBO = 0.1mA
7
hFE
Forward current transfer ratio (DC current gain) VCE = 5V, lC = 4A
10
VCE(sat) Collector to emitter saturation voltage
lC = 4A, lB = 0.8A
VBE(sat) Base to emitter saturation voltage
lC = 4A, lB = 0.8A
ton
Turn-on time
tstg
Storage time
tf
Fall time
lC = 7.5A, lB1 = 1.5A, lB2 = -1.5A
RL = 20Ω, PW = 20µs,
Duty ≤ 2%
MAX
1.0
0.1
1.2
1.5
1.0
2.0
1.0
UNIT
mA
V
V
µS
*VCEO(sus) Test circuit
50/60Hz
mercury relay
120W
6V
X
L 50mH
Y
1W
15V
G
Switching time test circuit
PW = 20µs
RL=20Ω
lB1
lC
lB2
lB1
lB2
0.9lC
lC
0.1lC
tON
tSTG tF
www.nellsemi.com
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