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2SC2625B View Datasheet(PDF) - Nell Semiconductor Co., Ltd

Part Name
Description
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2SC2625B Datasheet PDF : 3 Pages
1 2 3
SEMICONDUCTOR
2SC2625B RRooHHSS
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
2SC21622350J
15.6±0.4
9.6
4.8±0.2
2.0±0.1
TO-3P(B)
FEATURES
High-speed switching
High collector to base voltage VCBO
Satisfactory linearity of foward current transfer ratio hFE
TO-3P package which can be installed to the heat sink
with one screw
APPLICATIONS
Switching regulator and general purpose
Ultrasonic generators
High frequency inverters
Φ3.2±0,1
2
3
+0.2
1.05 -0.1
5.45±0.1
5.45±0.1
BCE
0.65
+0.2
-0.1
1.4
12 3
B
All dimensions in millimeters
C
E NPN
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
SYMBOL
PARAMETER
VCBO
Collector to base voltage
VCEO
VCEO(SUS)
Collector to emitter voltage
VEBO
Emitter to base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
TC= 25°C
VALUE
450
400
400
7
10
3
80
150
-55 to 150
UNIT
V
A
W
ºC
VALUE
1.55
UNIT
ºC/W
www.nellsemi.com
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