MTV6N100ED View Datasheet(PDF) - Motorola => Freescale
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTV6N100E/D
™ Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
D3PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
The D3PAK package has the capability of housing the largest chip
size of any standard, plastic, surface mount power semiconductor.
This allows it to be used in applications that require surface mount
components with higher power and lower RDS(on) capabilities. This
high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a drain–to–
source diode with a fast recovery time. Designed for high voltage,
high speed switching applications in surface mount PWM motor
controls and both ac–dc and dc–dc power supplies. These devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
G
®
D
• Robust High Voltage Termination
• Avalanche Energy Specified
S
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured – Not Sheared
• Specifically Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm, 13–inch/500 Unit Tape & Reel, Add –RL Suffix to Part Number
MTV6N100E
TMOS POWER FET
6.0 AMPERES
1000 VOLTS
RDS(on) = 1.5 OHM
CASE 433–01, Style 2
D3PAK Surface Mount
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VDSS
1000
Vdc
VDGR
1000
Vdc
VGS
±20
Vdc
VGSM
±40
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
ID
6.0
Adc
ID
4.2
IDM
18
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C (1)
PD
178
Watts
1.43
W/°C
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg – 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 27.77 mH, RG = 25 Ω )
EAS
mJ
720
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
RθJC
0.70
°C/W
RθJA
62.5
RθJA
35
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
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