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FST10045 View Datasheet(PDF) - GeneSiC Semiconductor, Inc.

Part Name
Description
View to exact match
FST10045
GENESIC
GeneSiC Semiconductor, Inc. GENESIC
FST10045 Datasheet PDF : 0 Pages
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100V VRRM
• Isolated to Plate
• Not ESD Sensitive
FST10045 thru FST100100
VRRM = 45 V - 100 V
IF(AV) = 100 A
TO-249AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST10045 FST10060 FST10080 FST100100 Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
45
60
80
100
V
32
42
57
70
V
45
60
80
100
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST10045
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
IF(AV)
IFSM
VF
IR
RΘJC
TC = 125 °C
tp = 8.3 ms, half sine
IFM = 50 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
100
1000
0.70
1
10
30
1.0
FST10060
100
1000
0.75
1
10
30
1.0
FST10080 FST100100 Unit
100
100
A
1000
1000
A
0.84
0.84
V
1
1
10
10
mA
30
30
1.0
1.0
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
 

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