PZTA44/45
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
PZTA44
500
V
Collector-Base Voltage
PZTA45
VCBO
400
V
PZTA44
400
V
Collector-Emitter Voltage
PZTA45
VCEO
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Collector Dissipation
PC
1.2
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown
Voltage
PZTA44
PZTA45
BVCBO IC=100μA, IB=0
500
400
Collector-Emitter Breakdown PZTA44
400
Voltage
PZTA45
BVCEO IC=1mA, IB=0
350
Emitter-Base Breakdown Voltage
BVEBO IE=100μA, IC=0
6
Collector Cut-OFF Current
PZTA44
PZTA45
ICBO
VCB=400V, IE=0
VCB=320V, IE=0
Collector Cut-OFF Current
PZTA44
PZTA45
ICES
VCE=400V, IB=0
VCE=320V, IB=0
Emitter Cut-OFF Current
IEBO VEB=4V, IC=0
VCE=10V, IC=1mA
40
DC Current Gain (Note)
hFE
VCE=10V, IC=10mA
VCE=10V, IC=50mA
50
45
VCE=10V, IC=100mA
40
IC=1mA, IB=0.1mA
Collector-Emitter Saturation Voltage
VCE(SAT) IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=10mA, IB=1mA
Current Gain Bandwidth Product
fT VCE=20V,Ic=10mA, f=100MHz 50
Output Capacitance
COB VCB=20V, IE=0, f=1MHz
Note: Pulse test: Pulse Width<300μs, Duty Cycle<2%
TYP MAX UNIT
V
V
V
V
V
0.1 μA
0.1 μA
0.5 μA
0.5 μA
0.1 μA
240
0.4 V
0.5 V
0.75 V
0.75 V
MHz
7 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-003.C