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PZTA44G-AA3-R View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
View to exact match
PZTA44G-AA3-R
UTC
Unisonic Technologies UTC
PZTA44G-AA3-R Datasheet PDF : 0 Pages
PZTA44/45
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
PZTA44
500
V
Collector-Base Voltage
PZTA45
VCBO
400
V
PZTA44
400
V
Collector-Emitter Voltage
PZTA45
VCEO
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Collector Dissipation
PC
1.2
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown
Voltage
PZTA44
PZTA45
BVCBO IC=100μA, IB=0
500
400
Collector-Emitter Breakdown PZTA44
400
Voltage
PZTA45
BVCEO IC=1mA, IB=0
350
Emitter-Base Breakdown Voltage
BVEBO IE=100μA, IC=0
6
Collector Cut-OFF Current
PZTA44
PZTA45
ICBO
VCB=400V, IE=0
VCB=320V, IE=0
Collector Cut-OFF Current
PZTA44
PZTA45
ICES
VCE=400V, IB=0
VCE=320V, IB=0
Emitter Cut-OFF Current
IEBO VEB=4V, IC=0
VCE=10V, IC=1mA
40
DC Current Gain (Note)
hFE
VCE=10V, IC=10mA
VCE=10V, IC=50mA
50
45
VCE=10V, IC=100mA
40
IC=1mA, IB=0.1mA
Collector-Emitter Saturation Voltage
VCE(SAT) IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=10mA, IB=1mA
Current Gain Bandwidth Product
fT VCE=20V,Ic=10mA, f=100MHz 50
Output Capacitance
COB VCB=20V, IE=0, f=1MHz
Note: Pulse test: Pulse Width<300μs, Duty Cycle<2%
TYP MAX UNIT
V
V
V
V
V
0.1 μA
0.1 μA
0.5 μA
0.5 μA
0.1 μA
240
0.4 V
0.5 V
0.75 V
0.75 V
MHz
7 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R207-003.C
 

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