PBSS4160PAN View Datasheet(PDF) - NXP Semiconductors.
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Description
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NXP Semiconductors
PBSS4160PAN
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
102 duty cycle = 1
0.75
Zth(j-a)
0.5
(K/W) 0.33
0.2
10
0.1
0.05
006aad171
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
4-layer PCB 70 µm, mounting pad for collector 1 cm2
10
102
103
tp (s)
Fig. 9. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Per transistor
ICBO
collector-base cut-off
current
IEBO
emitter-base cut-off
current
hFE
DC current gain
VCEsat
collector-emitter
saturation voltage
RCEsat
collector-emitter
saturation resistance
Conditions
VCB = 48 V; IE = 0 A; Tamb = 25 °C
VCB = 48 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A; Tamb = 25 °C
VCE = 2 V; IC = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
IC = 500 mA; IB = 50 mA; Tamb = 25 °C
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 0.5 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
-
-
100 nA
-
-
50
µA
-
-
100 nA
290 430 -
150 220 -
70
110 -
-
90
120 mV
-
185 240 mV
-
175 220 mV
-
-
240 mΩ
PBSS4160PAN
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 January 2013
© NXP B.V. 2013. All rights reserved
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