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PBSS4160PAN View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
View to exact match
PBSS4160PAN
NXP
NXP Semiconductors. NXP
PBSS4160PAN Datasheet PDF : 0 Pages
NXP Semiconductors
PBSS4160PAN
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
006aac611
0
0.01
1
10- 5
10- 4
10- 3
10- 2
10- 1
1
FR4 PCB 70 µm, mounting pad for collector 1 cm2
10
102
103
tp (s)
Fig. 7. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103
006aad170
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
4-layer PCB 70 µm, standard footprint
10
102
103
tp (s)
Fig. 8. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4160PAN
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 January 2013
© NXP B.V. 2013. All rights reserved
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