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PBSS4160PAN View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
View to exact match
PBSS4160PAN
NXP
NXP Semiconductors. NXP
PBSS4160PAN Datasheet PDF : 0 Pages
NXP Semiconductors
PBSS4160PAN
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Symbol
IBM
Ptot
Per device
Ptot
Tj
Tamb
Tstg
Parameter
peak base current
total power dissipation
Conditions
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Min Max Unit
-
1
A
[1]
-
370 mW
[2]
-
570 mW
[3]
-
530 mW
[4]
-
700 mW
[5]
-
450 mW
[6]
-
760 mW
[7]
-
700 mW
[8]
-
1450 mW
total power dissipation
Tamb ≤ 25 °C
junction temperature
ambient temperature
storage temperature
[1]
-
510 mW
[2]
-
780 mW
[3]
-
730 mW
[4]
-
960 mW
[5]
-
620 mW
[6]
-
1040 mW
[7]
-
960 mW
[8]
-
2000 mW
-
150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
PBSS4160PAN
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 January 2013
© NXP B.V. 2013. All rights reserved
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