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PBSS4160PAN View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
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PBSS4160PAN
NXP
NXP Semiconductors. NXP
PBSS4160PAN Datasheet PDF : 0 Pages
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NXP Semiconductors
PBSS4160PAN
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
1.2
VBE
(V)
0.8
(1)
(2)
(3)
0.4
006aad206
1.2
VBEsat
(V)
1.0
0.8
0.6
0.4
006aad207
(1)
(2)
(3)
0
10-1
1
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 12. Base-emitter voltage as a function of collector
current; typical values
1
006aad208
VCEsat
(V)
10-1
(1)
(2)
(3)
10-2
0.2
10-1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb= 100 °C
Fig. 13. Base-emitter saturation voltage as a function of
collector current; typical values
10
VCEsat
(V)
006aad209
1
10-1
(1)
(2)
10-2
(3)
10-3
10-1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 14. Collector-emitter saturation voltage as a
function of collector current; typical values
10-3
10-1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 15. Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS4160PAN
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 January 2013
© NXP B.V. 2013. All rights reserved
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