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BCP52-10 View Datasheet(PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Part Name
Description
View to exact match
BCP52-10
HOTTECH
GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. HOTTECH
BCP52-10 Datasheet PDF : 2 Pages
1 2
Plastic-Encapsulate Transistors
FEATURES
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54...BCP56 (NPN)
BCP51/52/53(PNP)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol BCP51 BCP52 BCP53 Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature
VCBO
VCEO
VEBO
IC
IC
RθJA
Tstg
-45
-60
-100
V
-45
-60
-80
V
-5
V
-1000
mA
1.5
W
94
℃/W
-55 to +150
1. BASE
2. COLLECTO
3. EMITTER
SOT-223
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Base-emitter breakdown voltage
BCP51
BCP52
BCP53
BCP51
BCP52
BCP53
Symbol
Test conditions
VCBO
IC=- 0.1mA,IE=0
VCEO
VEBO
IC= -10mA,IB=0
IC= -10μA,IE=0
Min Max Unit
-45
-60
V
-100
-45
-60
V
-80
-5
V
Collector cut-off current
ICBO
VCB= -30 V, IE=0
-100 nA
hFE(1)
VCE=-2V, IC=-5mA
25
DC current gain
hFE(2)
VCE= -2V, IC=-150m A
63
250
hFE(3)
VCE= -2V, IC=-500m A
25
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA,IB=-50mA
-0.5 V
Base-emitter voltage
VBE
VCE=-2V, IC=-500m A
-1
V
Transition frequency
fT
VCE=-10V,IC=-50mA,f=100MHz 100
MHz
CLASSIFICATION OF hFE(2)
Rank
BCP51-10, BCP52 -10, BCP53-10
Range
63-160
BCP51-16, BCP52 -16, BCP53-16
100-250
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1
 

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