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BF240 View Datasheet(PDF) - New Jersey Semiconductor

Part NameDescriptionManufacturer
BF240 NPN Silicon Epitaxial Planar Transistors NJSEMI
New Jersey Semiconductor NJSEMI
BF240 Datasheet PDF : 2 Pages
1 2
BF240, BF241
Characteristics at Tamb = 25 °C
Symbol
Min.
Typ.
DC Current Gain
at VCE - 1 0 V, lc = 1 mA
BF240 hFE
67
-
BF241
hFE
36
Base Emitter Voltage at VCB = 1 0 V, lc = 1 mA
VBE
650
700
Collector Cutoff Current at VCB = 20 V
Thermal Resistance Junction to Ambient
ICBO
-
-
RlhA
-
-
Collector Base Breakdown Voltage at lc = 1 0 /uA
V(BH)CBO
40
-
Collector Emitter Breakdown Voltage at lc = 2 mA
V(BR)CEO
40
-
Emitter Base Breakdown Voltage at IE = 1 0 ^A
V(BH)EBO
4
-
Gain Bandwidth Product
at VCB= 10V, lc = 1 mA, f= 100MHz
BF240
fj
-
430
BF241
fr
400
Feedback Capacitance
at VCB= 10 V, lc = 1 mA, f = 1 MHz
-cre
-
0.27
Noise Figure (emitter grounded)
at VCB = 10V, lc = 1 mA
gs = 5 mS, t = 200 kHz
ys = (6.6 - j 3.3) mS, f = 1 00 MHz
F
-
1.5
F
1.6
Output Admittance
at VCB = 10 V, lc = 1 mA, f = 10.7 MHz
at VCB = 10 V, lc = 1 mA, f = 470 kHz
-
-
11 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Max.
220
125
740
100
420"
-
-
-
_
-
Value
-
mV
nA
K/W
V
V
V
MHz
MHz
PF
3.5
dB
dB
10.5
pS
8.3
Ms
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