2SC1212A View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
View to exact match
2SC1212A Datasheet PDF : 5 Pages
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2SC1212, 2SC1212A
Electrical Characteristics (Ta = 25°C)
2SC1212
2SC1212A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
50
—
—
80
—
—V
IC = 1 mA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
50
—
—
80
—
—V
IC = 10 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
4
—— 4
— —V
IE = 1 mA, IC = 0
Collector cutoff current ICBO
DC current tarnsfer ratio hFE*1
hFE
——5
——5
µA VCB = 50 V, IE = 0
60 — 200 60 — 200
VCE = 4 V, IC = 50 mA
20 — — 20 — —
VCE = 4 V, IC = 1 A
(pulse test)
Base to emitter voltage VBE
— 0.65 1.0 — 0.65 1.0 V
Collector to emitter
saturation voltage
VCE(sat)
—
0.75 1.5 —
0.75 1.5 V
VCE = 4 V, IC = 50 mA
IC = 1 A, IB = 0.1 A
(pulse test)
Gain bandwidth product fT
— 160 — — 160 —
Note: 1. The 2SC1212 and 2SC1212A are grouped by hFE as follows.
MHz VCE = 4 V, IC = 30 mA
B
60 to 120
C
100 to 200
Maximum Collector Dissipation Curve
1.0
0.75
0.5
0.25
0
50
100
150
200
Ambient temperature Ta (°C)
Maximum Collector Dissipation Curve
12
8
4
0
50
100
150
Case temperature TC (°C)
2
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