MJ2500 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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MJ2500

Silicon PNP Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlingtion Power Transistor

MJ2500

DESCRIPTION

·Built-in Base-Emitter Shunt Resistors

·High DC current gain-

hFE = 1000 (Min) @ IC = -5A

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= -60V(Min)

·Complement to type MJ3000

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-60

V

VCEO Collector-Emitter Voltage

-60

V

VEBO Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-10

A

IBB

Base Current

-0.2

A

PC

Collector Power Dissipation@TC=25℃ 150

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-55~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX

1.17

UNIT

℃/W

isc Website：www.iscsemi.cn

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