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MSD602-RT1/D View Datasheet(PDF) - Motorola => Freescale

Part Name
Description
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MSD602-RT1/D Datasheet PDF : 4 Pages
1 2 3 4
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN General Purpose Amplifier
Transistor Surface Mount
COLLECTOR
3
Order this document
by MSD602–RT1/D
MSD602-RT1
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
2
BASE
Value
1
EMITTER
Unit
Collector–Base Voltage
V(BR)CBO
60
Vdc
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
V(BR)CEO
50
V(BR)EBO
7.0
IC
500
Vdc
Vdc
mAdc
Collector Current — Peak
IC(P)
1.0
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
PD
200
mW
TJ
150
°C
Tstg
– 55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
Collector–Base Cutoff Current (VCB = 20 Vdc, IE = 0)
DC Current Gain(1)
(VCE = 10 Vdc, IC = 150 mAdc)
(VCE = 10 Vdc, IC = 500 mAdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE1
hFE2
Collector–Emitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc)
VCE(sat)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
1. Pulse Test: Pulse Width 300 µs, D.C. 2%.
DEVICE MARKING
3
2
1
CASE 318D–03, STYLE 1
SC–59
Min
Max
Unit
50
Vdc
60
Vdc
7.0
Vdc
0.1
µAdc
120
240
40
0.6
Vdc
15
pF
Marking Symbol
WRX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
 

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