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BU208A View Datasheet(PDF) - Continental Device India Limited

Part Name
Description
View to exact match
BU208A
CDIL
Continental Device India Limited CDIL
BU208A Datasheet PDF : 3 Pages
1 2 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR POWER TRANSISTOR
BU208A
TO-3
Metal Can Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Base Current Continuous
Peak (Negative)
Power Dissipation @ Tc=95ºC
Derate Above 95ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO (sus)
VCES
VEBO
IC
ICM
IB
IBM
PD
Tj, Tstg
VALUE
700
1500
5.0
5.0
7.5
4.0
3.5
12.5
0.625
- 65 to +115
UNITS
V
V
V
A
A
W
W/ºC
ºC
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
1.6
Maximum Lead Temperature for
TL
275
Soldering Purpose 1/8" from Case for
5 Seconds
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaing Voltage
Collector Cut off Current
Emitter Base Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
SYMBOL
VCEO (sus)*
ICES
VEBO
hFE*
VCE (sat) *
VBE (sat) *
TEST CONDITION
IC=100mA, L=25mH
VCE=Rated VCES, VBE=0
IE=10mA, IC=0
IE=100mA, IC=0
IC=4.5A, VCE=5V
IC=4.5A, IB=2A
IC=4.5A, IB=2A
ºC/W
ºC
MIN Typ MAX UNITS
700
V
1.0
mA
5.0
V
7.0
2.25
1.0
V
1.5
V
Dynamic Characteristics
Current Gain Bandwidth Product
Output Capacitance
fT
IC=0.1A, VCE=5V,f=1MHz
Cob
VCB=10V, IE=0, f=1MHz
Switching Characteristics
Storage Time
Fall Time
tS
IC=4.5A, IB1=1.8A, LB=10µH
tf
IC=4.5A, IB1=1.8A, LB=10µH
Pulse test: PW=300µs; Duty Cycle<2%
Continental Device India Limited
Data Sheet
4.0
MHz
125
pF
8.0
µs
0.4
µs
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