PD55025S-E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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PD55025S-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

STMicroelectronics 

PD55025-E

PD55025S-E

RF POWER transistor, LdmoST plastic family

N-channel enhancement-mode, lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 25 W with 14.5dB gain @ 500 MHz /

12.5 V

■ New RF plastic package

Description

The device is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 12 V in common source mode at

frequencies up to 1 GHz. The device boasts the

excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

The device’s superior linearity performance

makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performance and ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note

AN1294).

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Figure 1. Pin connection

Source

Gate

Drain

Table 1. Device summary

Order code

PD55025-E

PD55025S-E

PD55015TR-E

PD55015STR-E

June 2010

Package

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

Doc ID 12330 Rev 2

Packing

Tube

Tube

Tape and reel

Tape and reel

1/23

www.st.com

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