M12L64164A-6TA View Datasheet(PDF) - [Elite Semiconductor Memory Technology Inc.

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M12L64164A-6TA

1M x 16 Bit x 4 Banks Synchronous DRAM

[Elite Semiconductor Memory Technology Inc. 

ESMT

M12L64164A

Operation temperature condition -25℃ ~ 85℃

Single Bit Read-Write-Read Cycle (Same Page) @ CAS Latency = 3,Burst Length = 1

CLOCK

CKE

CS

RAS

CAS

ADDR

A13, A12

tCH

0

1

2

3

4

5

6

tCC

*Note1

tCL

tRAS

tRC

tSH

tRCD

7

8

9

10

11

12

13

14

15

16 17

18 19

HIGH

tSH

tRP

tSS

tSS

tSH

Ra

tSS

*Note2

BS

tSH

tSS

Ca

*Note2,3

BS

tCCD

Cb

*Note2,3

BS

Cc

*Note2,3 *Note4

BS BS

Rb

*Note2

BS

A10/AP

Ra

DQ

WE

DQM

*Note 3

tSAC

tSLZ

*Note 3

*Note 3 *Note4

Qa

tOH

tSH

Db

tSS

tSH

tSS

tSS

tSH

Rb

Qc

Row Active

Read

Write

Read

Precharge

Row Active

:Don't Care

Elite Semiconductor Memory Technology Inc.

Publication Date: Dec. 2004

Revision: 0.1

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